tsc5802d high voltage fast-switching npn power transistor 1/5 version: a13 to - 251 (ipak) to - 252 (dpak) product summary bv ceo 450v bv cbo 1050v i c 2a v ce(sat) 0.5v @ i c =0.7a, i b =0.14a features high voltage capability high switching speed block diagram structure silicon triple diffused type npn silicon transistor ordering information part no. package packing tsc5802dch c5g to-251 75pcs / tube tsc5802dcp rog to-252 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (t a = 25 o c, unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 1050 v collector-emitter voltage @ v be =0v v ces 450 v emitter-base voltage v ebo 15 v collector current i c 2 a collector peak current (tp <5ms) i cm 4 a base current i b 1.5 a base peak current (tp <5ms) i bm 3 a power total dissipation @ tc=25oc p dtot 30 w maximum operating junction temperature t j +150 o c storage temperature range t stg -55 to +150 o c note: single pulse. p w = 300us, duty 2% thermal performance parameter symbol limit unit thermal resistance C junction to case r ? jc 4.17 o c/w thermal resistance - junction to ambient r ? ja 100 o c/w pin definition : 1. base 2. collector 3. emitter
tsc5802d high voltage fast-switching npn power transistor 2/5 version: a13 electrical specifications (t a = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c =0.5ma bv cbo 1050 -- -- v collector-emitter breakdown voltage i c =5ma bv ceo 450 -- -- v emitter-base breakdown voltage i e =1ma bv ebo 15 -- -- v collector cutoff current v ce =400v, i b =0 i ceo -- 10 250 ua collector cutoff current v cb =950v, i e =0 i cbo -- -- 10 ua collector-emitter saturation voltage i c =0.7a, i b =0.14a v ce(sat) 1 --- -- 0.5 v collector-emitter saturation voltage i c =2a, i b =0.6a v ce(sat) 2 --- 1.5 3.0 v base-emitter saturation voltage i c =2a, i b =0.6a v be(sat) 1 -- 1.0 1.6 v dc current gain v ce =5v, i c =100ma h fe 1 50 70 100 v ce =3v, i c =500ma h fe 2 18 23 50 diode forward voltage i c =1a v f -- -- 1.5 v resistive load switching time (ratings) rise time v cc =5v, i c =0.5a, t r -- -- 1 us storage time t stg 2.5 3 3.5 us fall time t f -- -- 1.2 us notes: pulsed duration =380us, duty cycle 2%
tsc5802d high voltage fast-switching npn power transistor 3/5 version: a13 to-251 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsc5802d high voltage fast-switching npn power transistor 4/5 version: a13 to-252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsc5802d high voltage fast-switching npn power transistor 5/5 version: a13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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